
| Res | Proprietas Technica | ||
| Krypton altae puritatis GB/T5829-2006 | Krypton purissimum | ||
| Puritas Kr (fractio voluminis)/10-2≥ | 99.999 | 99.9995 | 99.9999 |
| Nitrogenium (N2) contentum (fractio voluminis)/10-6≤ | 2 | 1.5 | 0.2 |
| Oxygenium (O2) contentum (fractio voluminis)/10-6≤ | 1.5(O2+Ar) | 0.5(O2+Ar) | 0.1 |
| Argon (Ar) contentum (fractio voluminis)/10-6≤ | 0.05 | ||
| Hydrogenium (H2) contentum (fractio voluminis)/10-6≤ | 0.5 | 0.2 | 0.05 |
| Monoxidi carbonii (CO) contentum (fractio voluminis)/10-6≤ | 0.3 | 0.1 | 0.05 |
| Dioxidum carbonis (CO2) contentum (fractio voluminis)/10-6≤ | 0.4 | 0.1 | 0.05 |
| Methanum (CH4) contentum (fractio voluminis)/10-6≤ | 0.3 | 0.1 | 0.05 |
| Aqua (H2O) contentum (fractio voluminis)/10-6≤ | 2 | 1 | 0.2 |
| Contentum Xenonis (Xe) (fractio voluminis)/10-6≤ | 2 | 1 | 0.2 |
| Fluoridum (CF4) contentum (fractio voluminis)/10-6≤ | 1 | 0.2 | 0.05 |
Campus applicationis: praecipue adhibitum in industria semiconductorum, industria vacui electrici, industria fontis lucis electrici, necnon gas laser, valetudine medica et aliis campis.